New Transistor Breakthrough Can Withstand Nearly 4,000 Volts Before Breakdown

Researchers have developed a new type of transistor that can withstand almost 4,000 volts before electrical breakdown, potentially opening the door to more powerful and efficient electronic systems for electric vehicles, renewable energy and artificial intelligence data centres.

The experimental device, created by researchers at the École Polytechnique Fédérale de Lausanne (EPFL), uses advanced gallium nitride (GaN) technology built on a silicon substrate. The breakthrough aims to overcome one of the biggest challenges facing high-voltage GaN electronics: preventing devices from failing when exposed to extreme electrical stress.

Gallium nitride transistors are already widely used in applications such as fast chargers and high-frequency electronics because they offer improved efficiency compared with traditional silicon devices. However, many existing GaN power transistors are limited to breakdown voltages of around 600 to 650 volts, restricting their use in higher-power systems.

The new design, known as an intrinsic polarization superjunction (iPSJ) transistor, uses the natural electrical properties of gallium nitride to distribute voltage more evenly throughout the device. This reduces the risk of damaging electric fields forming in a single area of the transistor.

Unlike conventional semiconductor designs that rely on chemical doping to control electrical characteristics, the new approach uses built-in polarization effects within the material itself. This could improve reliability and performance, particularly in demanding environments with high temperatures and high voltages.

Testing showed that the new GaN structures were able to handle more than 3.4 kV, with some designs approaching 4 kV before breakdown. The researchers say the technology also maintains low electrical resistance, helping reduce energy losses and heat generation.

The development could have major applications across several industries, including:

* Electric vehicle charging systems and power management
* AI and cloud data centre power infrastructure
* Renewable energy systems such as solar and wind power conversion
* Industrial equipment requiring compact high-voltage electronics

The research highlights the growing importance of wide-bandgap semiconductor materials such as gallium nitride and silicon carbide. These materials can operate at higher voltages, higher temperatures and greater frequencies than traditional silicon, making them attractive for next-generation power electronics.

Although the transistor is still at the research stage, the breakthrough could help accelerate the move towards smaller, more efficient and more powerful electronic devices.

The research was published in Nature Electronics under the title “Intrinsic polarization superjunctions in III-nitrides for efficient power electronics.”